OM1N100ST 查看數據表（PDF） - Omnirel Corp => IRF
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OM1N100ST Datasheet PDF : 4 Pages
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ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM5N100SA (See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IGSSR
IDSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage
Drain Current
1000
2.0
ID(on) On-State Drain Current
5.0
RDS(on) Static Drain-Source On-State
Resisitance1
V VGS = 0,
ID = 250 mA
4.0 V VDS = VGS, ID = 250 mA
100 nA VGS = 20 V, VDS = 0
-100 nA VGS = - 20 V, VDS = 0
0.25 mA VDS = Max. Rat., VGS = 0
1.0 mA VDS = 0.8 x Max. Rat.,
VGS = 0, TC = 125° C
A VDS > ID(on) x RDS(on)Max.,
VGS = 10 V
3.0
VGS = 10 V, ID = 2.5 A
RDS(on) Static Drain-Source On-State
Resistance1
6.0
VGS = 10 V, ID = 2.5 A
TC = 100 C
DYNAMIC
gfs
Forward Transductance
4.0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Td(on) Turn-On Delay Time
tr
Rise Time
Tr(Voff) Off-Voltage Rise Time
tf
Fall Time
S
2600 pF
350 pF
150 pF
VDS = 25 VDS(on), ID = 2.5 A
VGS = 0
VDS = 25 V
f = 1 MHz
65 ns
55 ns
62 ns VDD = 800 V, ID =6A
25 ns RG = 7W, VGS = 10 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
(Body Diode)
ISM Source Current2
(Body Diode)
VSD Diode Forward Voltage1
trr
Reverse Recovery Time
6
A Modified MOSPOWER
D
symbol showing
24 A the integral P-N G
Junction rectifier.
S
2.5 V TC = 25 C, IS = 6 A, VGS = 0
1100
ns IF = IS,VDD = 100 V
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area.
3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6N100SA (See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IGSSR
IDSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
1000
2.0
ID(on) On-State Drain Current
6.0
RDS(on) Static Drain-Source On-State
Resistance1
V
4.0 V
100 nA
- 100 nA
0.25 mA
1.0 mA
A
2.0
VGS = 0,
ID = 250 mA
VDS = VGS, ID = 250 mA
VGS = 20 V, VDS = 0
VGS = - 20 V, VDS = 0
VDS = Max. Rat., VGS = 0
VDS = 0.8 x Max. Rat.,
VGS = 0, TC = 125° C
VDS > ID(on) x RDS(on)Max.,
VGS = 10 V
VGS = 10 V, ID = 3.0 A
RDS(on) Static Drain-Source On-State
Resistance1
4.0
VGS = 10 V, ID = 3.0 A
TC = 100° C
DYNAMIC
gfs
Forward Transductance
4.0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Td(on) Turn-On Delay Time
tr
Rise Time
Tr(Voff) Off-Voltage Rise Time
tf
Fall Time
S
2600 pF
350 pF
150 pF
65 ns
55 ns
62 ns
25 ns
VDS = 25V, ID = 3.0 A
VGS = 0
VDS = 25 V
f = 1 MHz
VDD = 800 V, ID = 6A
RG = 7W, VGS = 10 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
(Body Diode)
ISM Source Current2
(Body Diode)
VSD Diode Forward Voltage1
trr
Reverse Recovery Time
6
24
2.5
1000
A Modified MOSPOWER
D
symbol showing
A the integral P-N G
Junction rectifier.
S
V TC = 25 C, IS = 6 A, VGS = 0
ns IF = IS,VDD = 100 V
dlF/ds = 100 A/ms, TJ = 150 C
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area.
3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
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