PN4117A 查看數據表（PDF） - Fairchild Semiconductor

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PN4117A

N-Channel Switch

Fairchild Semiconductor 

PN4117A

N-Channel Switch

• This device is designed for low current DC and audio application.

These devices provide excellent performance as input stages for sub-

picoamp instrumentation or any high impedance signal sources.

• Sourced from process 53.

1

TO-92

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings * TA=25°C unless otherwise noted

Symbol

Parameter

VDG

Drain-Gate Voltage

VGS

Gate-Source Voltage

IGF

Forward Gate Current

TSTG

Operating and storage Temperature Range

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

Value

40

-40

50

- 55 ~ 150

NOTES:

1. These ratings are based on a maximum junction temperature of 150degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Units

V

V

mA

°C

Electrical Characteristics TA=25°C unless otherwise noted

Symbol

Parameter

Test Condition

Off Characteristics

V(BR)GSS Gate-Source Breakdown Voltage

VGS(off) Gate-Source Cutoff Voltage

IGSS

Gate Reverse Current

On Characteristics

VDS = 0, IG = -1µA

VDS = -10V, ID = 1.0nA

VDS = 0V, VGS = -20V

IDSS

Zero-Gate Voltage Drain Current *

Small Signal Characteristics

VDS = 10V, VGS = 0

gfs

Common Source Forward Transconductance VDS = 10V, VGS = 0

f = 1.0KHz

gOSS

Common Source Output Conductance

VDS = 10V, VGS = 0

f = 1KHz

RE(YFS)

Common Source Forward Conductance

VDS = 10V, VGS = 0

f = 30MHz

CISS

Input Capacitance

VDS = 10V, VGS = 0

f = 1.0KHz

Crss

Reverse Transfer Capacitance

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%

VDS = 10V, VGS = 0

f = 1.0MHz

Min. Typ. Max. Units

-40

V

-0.6

-1.8

V

-1.0

pA

30

90

µA

70

210 mmhos

3.0 mmhos

60

mmhos

3.0

pF

1.5

pF

Thermal Characteristics TA=25°C unless otherwise noted

Symbol

Parameter

PD

Total Device Dissipation

Derate above 25°C

RθJC

RθJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max.

350

2.8

125

357

Units

mW

mW/°C

°C/W

°C/W

©2002 Fairchild Semiconductor Corporation

Rev. A1, November 2002

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