PS2535L-1-A 查看數據表（PDF） - Renesas Electronics
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PS2535L-1-A
Renesas Electronics
PS2535L-1-A Datasheet PDF : 15 Pages
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PS2535-1,PS2535L-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
80
60
0.7 mW/°C
40
20
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
220
200
180
160
2.0 mW/°C
140
120
100
80
60
40
20
0
25
50
75
100
Ambient Temperature TA (°C)
0
25
50
75
100
Ambient Temperature TA (°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100 TA = +100°C
50
+60°C
+25°C
10
5
0°C
1
–25°C
–50°C
0.5
0.1
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Forward Voltage VF (V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
100
50
5 mA
3 mA
2 mA
1 mA
10
5
IF = 0.5 mA
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Collector Saturation Voltage VCE (sat) (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
100 000
VCEO = 350 V
10 000
1 000
CTR = 1 068%
2 290%
4 360%
100
10
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
5 mA
50
3 mA
2 mA
1 mA
10
5
IF = 0.5 mA
1
–50 –25 0
25 50 75 100
Ambient Temperature TA (°C)
1
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PN10447EJ03V0DS
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