RMM2080 查看數據表（PDF） - Fairchild Semiconductor

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RMM2080

2-18 GHz Wideband Variable-Gain Driver Amplifier

Fairchild Semiconductor 

May 2004

RMM2080

2-18 GHz Wideband Variable-Gain Driver Amplifier

General Description

The Fairchild Semiconductor’s RMM2080 GaAs MMIC

device is a three-stage distributed medium-power amplifier

with gain control capability. The circuit incorporates ion-

implanted, 0.5-µm gate MESFET devices fabricated on a

semi-insulating GaAs substrate. The first two stages are 4-

cell distributed amplifiers utilizing dual-gate FETs for

improved gain per stage and to facilitate gain control

(4x125µm & 4x250µm). The third stage is a 3-cell

distributed dual-gate FET amplifier designed for high output

power and efficiency (3x500µm). The RMM2080 amplifier

is designed for interconnection with microstrip transmission

media using fully automatic assembly techniques.

Features

• 2–18GHz Bandwidth

• 24dB Typical Gain

• ±2dB Gain Flatness

• 20dBm Output Power Typical

• Three Stages of Distributed Amplification

• Gain Control of up to 70dB range

• Dual-Gate Ion-Implanted 0.5µm FETs

• Chip Size: 4.14mm x 3.22mm x 0.1mm

Device

Absolute Ratings

Symbol

Vd

Vg

Vgd

Id

PIN(CW)

TCASE

TSTORAGE

RJC

Parameter

Positive Drain DC Voltage (+7V Typ)

Negative DC Voltage

Simultaneous (Vd-Vg)

Positive DC Current

RF Input Power (from 50Ω source)

Operating Baseplate Temperature

Storage Temperature Range

Thermal Resistance (Channel to Backside)

Ratings

+8

-2

10

400

+8

-30 to +85

-55 to +125

22

Units

V

V

V

mA

dBm

°C

°C

°C/W

©2004 Fairchild Semiconductor Corporation

RMM2080 Rev. C

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