S9011F 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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S9011F

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

S9011 TRANSISTOR（ NPN ）

FEATURE

Power dissipation

PCM : 0.31 W（Tamb=25℃）

Collector current

ICM: 0.03 A

Collector-base voltage

V(BR)CBO : 30 V

Operating and storage junction temperature range

Tj, Tstg: -55℃ to +150℃

TO— 92

1.EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Symbol

Test conditions

MIN

TYP

MAX

Collector-base breakdown voltage

V(BR)CBO Ic= 100μA ， IE=0

30

Collector-emitter breakdown voltage

V(BR)CEO IC= 0.1 mA , IB=0

20

Emitter-base breakdown voltage

V(BR)EBO IE= 100μA， IC=0

4

Collector cut-off current

ICBO

VCB=16V , IE=0

0.1

Collector cut-off current

ICBO

VCB=16V , IE=0

0.1

Emitter cut-off current

IEBO

VEB= 3.5V, IC=0

0.1

DC current gain

hFE(1)

VCE=5V, IC=1m A

28

270

Collector-emitter saturation voltage

VCE(sat)

IC= 10 mA, IB= 1m A

0.3

Base-emitter voltage

VBE(sat)

IC= 10 mA, IB= 1m A

1

UNIT

V

V

V

μA　

μA

μA

V

V

Transition frequency

fT

VCE=5V,IC=1mA,

150

f=30MHz

MHz

CLASSIFICATION OF hFE(1)

Rank

D

E

Range

28-45

39-60

F

54-80

G

72-108

H

97-146

I

132-198

J

180-270

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