JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9011 TRANSISTOR( NPN )
FEATURE
Power dissipation
PCM : 0.31 W(Tamb=25℃)
Collector current
ICM: 0.03 A
Collector-base voltage
V(BR)CBO : 30 V
Operating and storage junction temperature range
Tj, Tstg: -55℃ to +150℃
TO— 92
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)CBO Ic= 100μA , IE=0
30
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1 mA , IB=0
20
Emitter-base breakdown voltage
V(BR)EBO IE= 100μA, IC=0
4
Collector cut-off current
ICBO
VCB=16V , IE=0
0.1
Collector cut-off current
ICBO
VCB=16V , IE=0
0.1
Emitter cut-off current
IEBO
VEB= 3.5V, IC=0
0.1
DC current gain
hFE(1)
VCE=5V, IC=1m A
28
270
Collector-emitter saturation voltage
VCE(sat)
IC= 10 mA, IB= 1m A
0.3
Base-emitter voltage
VBE(sat)
IC= 10 mA, IB= 1m A
1
UNIT
V
V
V
μA
μA
μA
V
V
Transition frequency
fT
VCE=5V,IC=1mA,
150
f=30MHz
MHz
CLASSIFICATION OF hFE(1)
Rank
D
E
Range
28-45
39-60
F
54-80
G
72-108
H
97-146
I
132-198
J
180-270