SD101AW 查看數據表（PDF） - Vishay Semiconductors

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SD101AW

Small Signal Schottky Diodes

Vishay Semiconductors 

SD101AW / 101BW / 101CW

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air

Junction temperature

Storage temperature range

RthJA

Tj

Tstg

3001)

1251)

- 65 to + 150

K/W

°C

°C

1) Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Reverse breakdown voltage

IR = 10 μA

Leakage current

Forward voltage drop

VR = 50 V

VR = 40 V

VR = 30 V

IF = 1 mA

IF = 15 mA

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = IR = 5 mA,

recover to 0.1 IR

Part

Symbol Min

Typ.

Max

Unit

SD101AW V(BR)R

60

V

SD101BW V(BR)R

50

V

SD101CW V(BR)R

40

V

SD101AW

IR

200

nA

SD101BW

IR

200

nA

SD101CW

IR

200

nA

SD101AW

VF

0.41

V

SD101BW

VF

0.40

V

SD101CW

VF

0.39

V

SD101AW

VF

1.0

V

SD101BW

VF

0.95

V

SD101CW

VF

0.90

V

SD101AW

Ctot

2.0

pF

SD101BW

Ctot

2.1

pF

SD101CW

Ctot

2.2

pF

trr

1

www.vishay.com

2

Document Number 85679

Rev. 1.4, 16-Dec-05

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