SDB10S30(2001) 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

SDB10S30
(Rev.:2001)

Silicon Carbide Schottky Diode

Infineon Technologies 

Preliminary data

SDP10S30, SDB10S30

SDT10S30

Electrical Characteristics,at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

AC Characteristics

Total capacitive charge1)

VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C

Switching time2)

VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C

Total capacitance

Qc

-

23

-

trr

-

n.a.

-

C

VR=0V, TC=25°C, f=1MHz

VR=150V, TC=25°C, f=1MHz

VR=300V, TC=25°C, f=1MHz

-

600

-

-

55

-

-

40

-

Unit

nC

ns

pF

Page 3

2001-12-04

Share Link: