SDB10S30(2001) 查看數據表（PDF） - Infineon Technologies
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SDB10S30 Datasheet PDF : 9 Pages
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Preliminary data
SDP10S30, SDB10S30
SDT10S30
1 Power dissipation
Ptot = f (TC)
70
W
60
55
50
45
40
35
30
25
20
15
10
5
00 20 40 60 80 100 120 140 °C 180
TC
3 Typ. forward characteristic
IF = f (VF)
parameter: Tj , tp = 350 µs
20
A
2 Diode forward current
IF= f (TC)
parameter: Tj175 °C
11
A
9
8
7
6
5
4
3
2
1
00 20 40 60 80 100 120 140 °C 180
TC
4 Typ. forward power dissipation vs.
average forward current
PF(AV)=f(IF) TC=100°C, d = tp/T
32
W
16
24
14
12
20
10
8
16
-40°C
25°C
100°C
12
d=1
d=0.5
d=0.2
d=0.1
6
125°C
150°C
8
4
2
4
00.6 0.8
1
1.2 1.4 1.6 1.8 V
2.2
VF
Page 4
00 2 4 6 8 10 12 14 A 18
IF(AV)
2001-12-04
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