SFH4552 查看數據表（PDF） - Siemens AG

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SFH4552

GaAs Infrared Emitter

Siemens AG 

SFH 495 P

SFH 4552

Kennwerte (TA = 25 °C)

Characteristics

Bezeichnung

Description

Abstrahlwinkel

Half angle

SFH 495 P

SFH 4552

Schaltzeiten, Ie von 10 % auf 90 % und von

90 % auf 10 %, bei IF = 200 mA, RL = 50 Ω

Switching times, Ie from 10 % to 90 % and

from 90 % to10 %, IF = 200 mA, RL = 50 Ω

Kapazität

Capacitance

VR = 0 V, f = 1 MHz

Durchlaßspannung

Forward voltage

IF = 1 A, tp = 100 µs

Schwellenstrom1)

Threshold current 1)

Gesamtstrahlungsfluß

Total radiant flux

IF = 1 A, tp = 10 µs

Strahlstärke

Radiant intensity

IF = 1 A, tp = 10 µs

SFH 495 P

SFH 4552

Symbol

Symbol

ϕ

tr, tf

Co

VF

Ith

Φe

Ie

Wert

Value

± 30

± 50

7

90

2.1

< 150

700

400

200

1) Remark: This IRED works efficiently at forward currents higher than Ith.

Einheit

Unit

Grad

deg.

ns

pF

V

mA

mW

mW/sr

Warning:

This data sheet refers to high power infrared emitting semiconductors.

Depending on operating conditions (drive current, pulse duration, optics, etc.) they may emit

luminance/radiance levels considered harmful to the human eye, acc. to IEC 825.1.

When operating powerful emitters, care should be taken to comply with IEC 825.1 to mini-

mize any possible eye hazard:

- Use lowest possible drive level

- Use diffusing optics where possible

- Avoid staring into powerful emitters or connected fibers

Semiconductor Group

3

1998-09-18

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