Q65110A2709 查看數據表（PDF） - OSRAM GmbH
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Q65110A2709 Datasheet PDF : 11 Pages
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SFH 9202
Collector Current
Ι C 100
Ι C max %
80
-----I--C------ = f(d)
ICmax
OHO02255
60
40
20
Kodak neutral
white test card
Mirror
0
0
1
2
3
4 mm 5
d
Max. Permissible Forward Current
IF = f (TA)
120
mA
IF
OHL00986
100
80
Permissible Power Dissipation for
Diode and Transistor Ptot = f (TA )
160
mW
Ptot
Total power dissipation
OHL00945
120
Detector
100
Emitter
80
60
40
20
0 0 20 40 60 80 ˚C 100
TA
Transistor Capacitance (typ.)
CCE = f (VCE), TA = 25 °C, f = 1 MHz
20
OHO00496
C CE pF
15
Switching Characteristics t = f (RL)
TA = 25 °C, IF = 10 mA
10 3
OHO01367
t
μs
t on
t off
10 2
10 1
10 0
10 1
kΩ 10 2
RL
Collector Current IC = f (IF), spacing
d to reflector = 1 mm, 90% reflection
300
ΙC μA
OHO01324
200
60
10
40
100
VCE = 5 V
5
20
0 0 20 40 60 80 ˚C 100
TA
Forward Voltage (typ.) of the
Diode VF = f (T)
1.30
VF V
1.25
1.20
1.15
OHO02256
Ι F = 20 mA
10 mA
5 mA
1.10
1.05
1
-40 -20 0 20 40 60 C 100
T
0
10
-2
10 -1
10 0
10 1 V 10 2
V CE
Relative Spectral Emission of
Emitter (GaAs) Irel = f (λ) and
Detector (Si) Srel = f (λ)
100
Ι rel
Srel %
OHO00786
80
60
Detector
40
20
Emitter
0
700
800
900 1000 nm 1100
λ
0
0 4 8 12 16 mA 20
ΙF
Output Characteristics (typ.)
IC = f (VCE), spacing to reflector:
d = 1 mm, 90% reflection, TA = 25 °C
0.6
Ι C mA
Ι F = 25 mA
OHO01326
0.5
Ι F = 20 mA
0.4
Ι F = 15 mA
0.3
0.2
Ι F = 10 mA
0.1
Ι F = 5 mA
0
0.1
10 0
10 1 V
VCE
2007-04-03
6
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