SFM14-M 查看數據表（PDF） - Willas Electronic Corp.
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SFM14-M Datasheet PDF : 4 Pages
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WILLAS
1.0A 1S.0UAFSRUARCFEACMEOMUONUTNTSSUCPHEORTTFKAYSBTARRERCIETRIFRIEECRTSIF-IE5R0S-6-0200VV- 200V
SODSO-1D2-31-2L3+PAPCAKCAKGAGEE
S F MF1M1T-1HM2R0U-M+
S FTMHFP1RMb8UF1r-e2Me0P0ro-dMuc+t
Rating and characteristic curves (SFMPa11c-kMagTeHRouUtSliFnMe 18-M)
Features
• BatcFhIGp.1ro-TcYePssICdAeLsiFgOnR, eWxAcRelDlent power dissipation offers
FIG.2-TYPICAL FORWARD CURRENT
better reverse leakage current and thermal resistance.
• Low profile sCuHrfAaRceACmToEuRnItSeTdICapSplication in order to
o1p0timize board space.
• Low power loss, high efficiency.
• High current capability, low16f-Morward voltage drop.
• High surge capability. ~SFM
•
•
1G.0uardring
Ultra high-
for over
speed s
voSlFtMa15-gM e p
witching.
r
o
tec18t-iMon
~SFM
.
• Silicon epitaxial planar chip,17-mM etal silicon junction.
• Lead-free parts meet enviSrFoMnmental standards of
MIL-STD-19500 /228
• R.o1HS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
1.2
1.0
0.8
0.6
0.4
0.2
0
0
DERASTOINDG-1C23UHRVE
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.071(1.8)
0.056(1.4)
25 50 75 100 125 150 175
Mechanical data TJ=25 C
Pulse Width 300us
• Epoxy : UL94-V0 rated flam1e% rDeuttyaCrycdleant
AMBIENT TEMPERATURE ( C)
0.040(1.0)
0.024(0.6)
•
.01
Case
:
Molded
plastic,
SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
FIG.4-M0.0A31X(0IM.8)UTyMp. NON-REPETITIVE FORWARD0.031(0.8) Typ.
SURGE CURRENT
Method 2026
30
•.0P0o1larity : Indicated by cathode band
.4 .6 .8 1.0 1.2 1.4 1.6 1.8
• Mounting Position : Any
24
FORWARD VOLTAGE,(V)
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
18
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RECOVERY TIME CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. 12
50W
10W
Single NpOhNaINsDeUChTaIVlEf wave, N6O0NHINzDU, CrTeIVsEistive of inductive load.
For capacitive load, derate current by 20%
6
TJ=25 C
8.3ms Single Half
Sine Wave
JEDEC method
(+)
RATINGS
Marking C25oVddce
(approx.)
D.U.T.
Maximum( R) ecurrent Peak Reverse Voltage
1W
Maximum RMS VoltaNgOeN-
INDUCTIVE
Maximum DC Blocking Voltage
OSCILLISCOPE
(NOTE 1)
SY( M) BOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
PULSE
GENERATOR
(NOTVE R2)RM
(+)
VRMS
12 0 13
20
31 0
14
21
14
15
16
18
10
40
505
6100
80
10500
NUMBER OF CYCLES AT 60Hz
28
35
42
56
70
115
11050 0
105
120
200 Vo
140 Vo
VDC
20
30
40
50
60
80
100
150
200 Vo
MaximuNmOTAEvS:e1r.aRgisee TFimoer=w7nasrmdaRx.,eIncptuitfiIemdpedCanucrer=e1nmt egohm.22pF.
IO
1.0
A
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
FIG.5-TYPICAL JUNCTION CAPACITANCE
30
A
superimposed on rated load (JEDEC method)
70
Typical Thermal Resistance (Notrrte 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
+0.5A
|
Operating Temperature Range
|
|
Storage Temperature Range
|
|
0
|
|
-0.25ACHARACTERIST| ICS
CJ
60
120
P
TJ
-55 to +125
-55 to +150
℃
50
TSTG
- 65 to +175
℃
40
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
VF
30
0.50
0.70
0.85
0.9
0.92 V
Maximum Average Reverse Current at @T A=25℃
IR
20
0.5
mA
Rated DC Blocking Voltage
@T A=125℃
10
-1.0A
10
NOTES:
1cm
1- Measured at 1 MHZ and applied reveSrsEeT TvIMolEtaBgAeSEoFfO4R.0 VDC.
50 / 10ns / cm
2- Thermal Resistance From Junction to Ambient
0
.01
.05 .1
.5 1
5 10
50 100
REVERSE VOLTAGE,(V)
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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