SI9410DY 查看數據表（PDF） - TY Semiconductor
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SI9410DY Datasheet PDF : 2 Pages
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MOSFIECICT
Product specification
SI9410DY
■ Features
● VDS (V) = 30V
● ID = 7 A (VGS = 10V)
● RDS(ON) ＜0.03 Ω (VGS = 10V)
● RDS(ON) ＜0.04 Ω (VGS = 5V)
● RDS(ON) ＜0.05 Ω (VGS = 4.5V)
SOP-8
DDD D
G
SS
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150 ℃)*
TA = 25℃
TA = 70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction) *
Maximum Power Dissipation *
TA = 25℃
TA = 70℃
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient*
t ≤ 10 sec
* Surface Mounted on 1” x 1” FR4 Board.
N/C 1
S2
S3
G4
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
RthJA
8D
7D
6D
5D
Limit
30
±20
7.0
5.8
30
2.8
2.5
1.6
-55 to 150
50
Unit
V
A
A
A
W
℃
℃/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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