SI9956DY 查看數據表（PDF） - Vishay Semiconductors
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SI9956DY Datasheet PDF : 5 Pages
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Si9956DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 2.2 A
VGS = 4.5 V, ID = 1 A
VDS = 15 V, ID = 3.5 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = 10 V, VGS = 10 V, ID = 1.8 A
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typa Max Unit
1.0
V
"100
nA
2
mA
25
14
A
0.082
0.10
W
0.12
0.20
6.5
S
0.75
1.2
V
7
30
1.2
nC
2.1
8
20
12
20
21
90
ns
8
50
50
100
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70140
S-00652—Rev. L, 27-Mar-00
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