SK 80 MBBB 055 MOSFET,TRANSISTOR
Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C
Fig. 4 Breakdown voltage vs. temperature
Fig. 5 Typ. Turn-on/-off energy=f(Ic)
Fig. 6 Typ. Turn-on/-off energy=f(Rg)
Fig. 7 Gate charge characteristic, IDp = 90 A
Fig. 8 Diode forward characteristic, tp = 80 µs
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13-07-2009 DIL
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