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SPA-2118 查看數據表(PDF) - Sirenza Microdevices => RFMD

零件编号
产品描述 (功能)
生产厂家
SPA-2118
Sirenza
Sirenza Microdevices => RFMD Sirenza
SPA-2118 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Pin #
1
2
3
4
5, 6, 7, 8
EPAD
Preliminary
SPA-2118 850 MHz 1 Watt Power Amp.
Function
Vc1
Vbias
RF In
Vpc2
RF Out/Vc2
Gnd
Description
VC1 is the supply voltage for the first stage transistor. The configuration as
shown on application schematic is required for optimum RF performance.
Vbias is the bias control pin for the active bias network. Recommended
configuration is shown in the Application Schematic.
RF input pin. This pin requires the use of an external DC blocking capacitor as
shown in the Application Schematic.
Vpc2 is the bias control pin for the active bias network for the second stage.
The recommended configuration is shown in the Application Schematic.
RF output and bias pin. Bias should be supplied to this pin through an external
RF choke. Because DC biasing is present on this pin, a DC blocking capacitor
should be used in most applications (see application schematic). The supply
side of the bias network should be well bypassed. An output matching network is
necessary for optimum performance.
Exposed area on the bottom side of the package needs to be soldered to the
ground plane of the board for thermal and RF performance. Several vias should
be located under the EPAD as shown in the recommended land pattern (page 6).
Simplified Device Schematic
2
2
1
4
ACTIVE BIAS
NETWORK
ACTIVE BIAS
NETWORK
3
Caution: ESD sensitive
Appropriate precautions in handling, packag-
ing and testing devices must be observed.
The Moisture Sensitivity Level rating for this device is level 1
(MSL-1) based on the JEDEC 22-A113 standard classifica-
tion. No special moisture packaging/handling is required
during storage, shipment, or installation of the devices.
5-8
Absolute Maximum Ratings
Parameter (Ta = 25ºC)
Absolute
Limit
Max. Supply Current (IC1) at VCC typ.
Max. Supply Current (IC2) at VCC typ.
Max. Device Voltage (VCC) at Icc typ.
Max. RF Input Power
150 mA
750 mA
6.0 V
10 dBm
Max. Junction Temp. (TJ)
Max. Storage Temp.
+160 ºC
+150 ºC
Operation of this device beyond any one of these limits
may cause permanent damage. For reliable continuous
operation, the device voltage and current must not exceed
the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following
expression:
ICCVCC (max) < (TJ - TL)/Rth,j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-102012 Rev F

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