SPU02N60C3 查看數據表（PDF） - Infineon Technologies
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SPU02N60C3 Datasheet PDF : 12 Pages
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9 Typ. gate charge
VGS = f (QGate)
parameter: ID = 1.8 A pulsed
SPD02N60C3
16
V
Final data
SPD02N60C3
SPU02N60C3
10 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 1 SPD02N60C3
A
12
0.2 VDS max
10 0.8 VDS max
10 0
8
6
4
2
0
0 2 4 6 8 10 12 nC 15
QGate
11 Typ. drain current slope
di/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=1.8A
1000
A/µs
di/dt(on)
10 -1
10 -2
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
12 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=1.8 A
400
ns
300
600
250
td(off)
200
400
150
200
di/dt(off)
0
0
40 80 120 160 200 Ω 280
RG
Page 7
100
50
0
0
tf
td(on)
tr
40
80 120 160 200 Ω 260
RG
2003-10-02
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