CGY2013G/C1 查看數據表（PDF） - Philips Electronics

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CGY2013G/C1

GSM 4 W power amplifier

Philips Electronics 

Philips Semiconductors

GSM 4 W power amplifier

Preliminary specification

CGY2013G

FEATURES

• Power Amplifier (PA) overall efficiency 52%

• 35.5 dB gain

• 0 dBm input power

• Gain control range >55 dB

• Low output noise floor of PA < −130 dBm/Hz in GSM RX

band

• Wide operating temperature range −20 to +85 °C

• LQFP 48 pin package

• Compatible with power ramping controller PCF5077

• Compatible with GSM RF transceiver SA1620.

GENERAL DESCRIPTION

The CGY2013G is a GSM class 4 GaAs Monolithic

Microwave Integrated Circuit (MMIC) power amplifier

specifically designed to operate at 3.6 V battery supply.

The PA requires only a 30 dB harmonic low-pass filter to

comply with the GSM transmit spurious specification.

It can be switched off and its power controlled by

monitoring the actual drain voltage applied to the amplifier

stages.

APPLICATIONS

• 880 to 915 MHz hand-held transceivers for E-GSM

applications

• 900 MHz Time Division Multiple Access (TDMA)

systems.

QUICK REFERENCE DATA

SYMBOL

PARAMETER (1)

MIN.

VDD

positive supply voltage

−

IDD

positive peak supply current

−

Po(max)

maximum output power

−

Tamb

operating ambient temperature

−20

Note

1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.

TYP.

3.6

2.4

35.5

−

MAX.

−

−

−

+85

UNIT

V

A

dBm

οC

ORDERING INFORMATION

TYPE

NUMBER

CGY2013G

PACKAGE

NAME

DESCRIPTION

LQFP48 plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm

VERSION

SOT313-2

1998 Jan 23

2

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