CGY2013G/C1 查看數據表（PDF） - Philips Electronics

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CGY2013G/C1

GSM 4 W power amplifier

Philips Electronics 

Philips Semiconductors

GSM 4 W power amplifier

Preliminary specification

CGY2013G

AC CHARACTERISTICS

VDD = 3.6 V; Tamb = 25 °C; VGG1 = VGG2 = −1.8 V; measured on Philips demoboard.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Power amplifier

Pi

fRF

Po(max)

input power

RF frequency range

maximum output power

η

Po(min)

NRX

efficiency

minimum output power

output noise in RX band

H2

H3

Stab

2nd harmonic level

3rd harmonic level

stability

Tamb = 25 °C; VDD = 3.6 V

Tamb = −20 to +85 °C; VDD = 3 V

VDD = 3.6 V

VDD < 0.1 V

fRF = 925 to 935 MHz at Po(max)

fRF = 935 to 960 MHz at Po(max)

note 1

−2

880

33.5

32

42

−

−

−

−

−

−

−

−

35.5

−

52

−20

−

−

−

−

−

+2

915

−

−

−

−15

−117

−125

−35

−35

−70

dBm

MHz

dBm

dBm

%

dBm

dBm/Hz

dBm/Hz

dBc

dBc

dBc

Note

1. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1

load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied

360 electrical degrees during a 60 second period.

1998 Jan 23

6

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