CGY2014TT 查看數據表（PDF） - Philips Electronics
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CGY2014TT Datasheet PDF : 16 Pages
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Philips Semiconductors
GSM/DCS/PCS power amplifier
Preliminary specification
CGY2014TT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VDD
Tj(max)
Tstg
Ptot
Pi(LB)
Pi(HB)
PARAMETER
positive supply voltage
maximum operating junction temperature
storage temperature
total power dissipation
GSM input power
DCS/PCS input power
note 1
CONDITIONS
MAX. UNIT
5.2 V
150 °C
150 °C
2.0 W
10
dBm
10
dBm
Note
1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;
see Application Note (tbf).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
Rth(j-c)
thermal resistance from junction to case note 1
30
Note
1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;
see Application Note (tbf).
UNIT
K/W
DC CHARACTERISTICS
VDD = 3.5 V; Tamb = 25 °C; general operating conditions applied; peak current values measured during burst; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supplies: pins VDD1LB, VDD2LB, RFO/VDD3LB, VDD1HB, VDD2HB and RFO/VDD3HB
VDD
positive supply voltage
note 1
0
IDD(LB)
GSM positive peak supply current
Pi(LB) = 0 dBm
−
IDD(HB)
DCS/PCS positive peak supply current
Pi(HB) = 3 dBm
−
3.5 5.2 V
2
−
A
1.5 −
A
Note
1. The supply circuit includes a (drain) MOS switch with RDSon = 40 mΩ. The battery voltage is 3.6 V (typical value).
2000 Apr 11
5
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