ST780C04L2 查看數據表（PDF） - International Rectifier
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ST780C04L2 Datasheet PDF : 7 Pages
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ST780C..L Series
Bulletin I25192 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
04
400
ST780C..L
06
600
VRSM , maximum non-
repetitive peak voltage
V
500
700
IDRM/IRRM max.
@ T = T max
J
J
mA
80
On-state Conduction
Parameter
I
Max. average on-state current
T(AV)
@ Heatsink temperature
I
Max. RMS on-state current
T(RMS)
ITSM Max. peak, one-cycle
non-repetitive surge current
I2 t
Maximum I2t for fusing
I2√t Maximum I2√t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
V
Max. on-state voltage
TM
IH
Maximum holding current
IL
Typical latching current
ST780C..L
1350 (500)
55 (85)
2700
24400
25600
20550
21500
2986
2726
2112
1928
29860
Units Conditions
A 180° conduction, half sine wave
°C double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
A t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
KA2√s
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms
t = 8.3ms
100% VRRM
reapplied
t = 0.1 to 10ms, no voltage reapplied
0.80
0.90
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
0.14
0.13
1.31
600
1000
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
(I > π x IT(AV)),TJ = TJ max.
V
Ipk=
3600A,
T
J
=
T
J
max,
tp
=
10ms
sine
pulse
mA TJ = 25°C, anode supply 12V resistive load
Switching
di/dt
Parameter
Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
2
ST780C..L
1000
1.0
150
Units Conditions
A/µs
µs
Gate drive 20V, 20Ω, tr ≤ 1µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
I = 750A, T = T max, di/dt = 60A/µs, V = 50V
TM
J
J
R
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
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