Q68000-A8300 查看數據表（PDF） - Siemens AG

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Q68000-A8300

PNP Silicon Switching Transistor

Siemens AG 

SXT 2907 A

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

Collector-base breakdown voltage

IC = 10 µA

Emitter-base breakdown voltage

IE = 10 µA

Collector-base cutoff current

VCB = 60 V, IE = 0

VCB = 60 V, IE = 0, TA = 125 ˚C

Collector cutoff current

VCE = 30 V, VBE = 0.5 V

Emitter-base cutoff current

VEB = 3 V, IC = 0

Base cutoff current

VCE = 30 V, VBE = 3 V

DC current gain

IC = 100 µA, VCE = 10 V

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 150 mA, VCE = 10 V

IC = 500 mA, VCE = 10 V

Collector-emitter saturation voltage1)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

Base-emitter saturation voltage1)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 60

–

V(BR)CB0 60

–

V(BR)EB0 5

–

ICB0

–

–

–

–

ICEX

–

–

IEB0

–

–

IBL

–

–

hFE

VCEsat

VBEsat

75

–

100 –

100 –

100 –

50

–

–

–

–

–

–

–

–

–

–

V

–

–

10 nA

10

µA

50 nA

10

50

–

–

–

–

300

–

V

0.4

1.6

1.3

2.0

1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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