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T14L256A(2001) 查看數據表(PDF) - Taiwan Memory Technology

零件编号
产品描述 (功能)
生产厂家
T14L256A
(Rev.:2001)
TMT
Taiwan Memory Technology TMT
T14L256A Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
tm TE
CH
T14L256A
Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs
should not be applied.
2. The data output from DOUT are the same as the data written to DIN during the write cycle.
3. DOUT provides the read data for the next address.
4. Transition is measured ± 500 mV from steady state with CL = 5pF. This parameter is
guaranteed but not 100% tested.
5. If OE is low during a WE controlled write cycle, the write pulse width must be the larger of
tWP or (tWHZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the
required tDW. If OE is high during a WE controlled write cycle, this requirement does not
apply and the write pulse can be as short as the specified tWP.
Taiwan Memory Technology, Inc. reserves the right P. 7
to change products or specifications without notice.
Publication Date: APR. 2001
Revision: E

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