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HAL503SF-E 查看數據表(PDF) - Micronas

零件编号
产品描述 (功能)
生产厂家
HAL503SF-E
Micronas
Micronas Micronas
HAL503SF-E Datasheet PDF : 44 Pages
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HAL502
4.2. HAL 502
The HAL 502 is the most sensitive latching sensor of this
family (see Fig. 45).
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
For correct functioning in the application, the sensor re-
quires both magnetic polarities (north and south) on the
branded side of the package.
Magnetic Features:
switching type: latching
high sensitivity
typical BON: 2.6 mT at room temperature
typical BOFF: 2.6 mT at room temperature
operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
typical temperature coefficient of magnetic switching
points is 1000 ppm/K
Applications
The HAL 502 is the optimal sensor for all applications
with alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
applications with large airgap or weak magnets,
rotating speed measurement,
commutation of brushless DC motors,
CAM shaft sensors, and
magnetic encoders.
Output Voltage
VO
BHYS
VOL
BOFF
0
BON
B
Fig. 45: Definition of magnetic switching points for
the HAL 502
Magnetic Characteristics at TJ = 40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
40 °C
25 °C
100 °C
140 °C
170 °C
On point BON
Min. Typ. Max.
1
2.8
5
1
2.6
4.5
0.95 2.5
4.4
0.9
2.4
4.3
0.9
2.3
4.3
Off point BOFF
Min. Typ. Max.
Hysteresis BHYS
Min. Typ. Max.
5
2.8 1
4.5
5.6
7.2
4.5 2.6 1
4.5
5.2
7
4.4 2.5 0.95 4
5
6.8
4.3 2.4 0.9 3.7
4.8
6.8
4.3 2.3 0.9 3.5
4.6
6.8
Magnetic Offset
Unit
Min. Typ. Max.
0
mT
1.5 0
1.5 mT
0
mT
0
mT
0
mT
The hysteresis is the difference between the switching points BHYS = BON BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
16
Micronas

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