HAL503SF-E 查看數據表（PDF） - Micronas

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HAL503SF-E

Hall Effect Sensor

Micronas 

HAL503

mT

12

BON

BOFF

8

4

0

–4

HAL 503

BON

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

–8

BOFF

–12

0

5 10 15 20 25 30 V

VDD

Fig. 4–10: Typ. magnetic switching points

versus supply voltage

mT

12

BON

BOFF

8

4

0

–4

HAL 503

BON

TA = –40 °C

TA = 25 °C

TA = 100 °C

TA = 170 °C

–8

BOFF

–12

3 3.5 4.0 4.5 5.0 5.5 6.0 V

VDD

Fig. 4–11: Typ. magnetic switching points

versus supply voltage

Micronas

mT

12

BON

BOFF

8

4

BONmax

HAL 503

BONmin

BONtyp

0

VDD = 3.8 V

VDD = 4.5 V... 24 V

–4

BOFFmax

BOFFtyp

–8

–12

–50 0

BOFFmin

50 100 150 200 °C

TA, TJ

Fig. 4–12: Magnetic switching points

versus temperature

Note: In the diagram “Magnetic switching points versus

ambient temperature” the curves for BONmin, BONmax,

BOFFmin, and BOFFmax refer to junction temperature,

whereas typical curves refer to ambient temperature.

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