HAL503SF-E 查看數據表（PDF） - Micronas
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HAL503SF-E Datasheet PDF : 44 Pages
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HAL5xx
3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
IDD
IDD
VDDZ
VOZ
Parameter
Pin No. Min.
Supply Current
1
2.3
Supply Current over
Temperature Range
1
1.6
Overvoltage Protection
at Supply
1
–
Overvoltage Protection at Output 3
–
Typ.
3
3
28.5
28
Max.
Unit
4.2
mA
5.2
mA
32
V
32
V
VOL
Output Voltage
VOL
Output Voltage over
Temperature Range
3
–
130
280
mV
3
–
130
400
mV
IOH
Output Leakage Current
3
–
0.06
0.1
µA
IOH
fosc
fosc
ten(O)
tr
Output Leakage Current over 3
Temperature Range
Internal Oscillator
–
Chopper Frequency
Internal Oscillator Chopper Fre- –
quency over Temperature Range
Enable Time of Output after
1
Setting of VDD
Output Rise Time
3
–
–
10
µA
49
62
–
kHz
38
62
–
kHz
–
30
70
µs
–
75
400
ns
tf
Output Fall Time
3
–
50
400
ns
RthJSB
Thermal Resistance Junction
–
–
150
200
K/W
case
to Substrate Backside
SOT-89B
RthJA
Thermal Resistance Junction
–
–
150
200
K/W
case
to Soldering Point
TO-92UA
1) B > BON + 2 mT or B < BOFF – 2 mT for HAL 50x, B > BOFF + 2 mT or B < BON – 2 mT for HAL 51x
Conditions
TJ = 25 °C
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
IOL = 20 mA, TJ = 25 °C
IOL = 20 mA
Output switched off,
TJ = 25 °C, VOH = 3.8 to 24 V
Output switched off,
TJ ≤150 °C, VOH = 3.8 to 24 V
TJ = 25 °C,
VDD = 4.5 V to 24 V
VDD = 12 V 1)
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–3
5.0
2.0
2.0
1.0
Fig. 3–3: Recommended pad size SOT-89B
Dimensions in mm
8
Micronas
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