TDA1517ATW 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

TDA1517ATW

8 W BTL or 2 × 4 W SE power amplifier

NXP Semiconductors. 

NXP Semiconductors

8 W BTL or 2 × 4 W SE power amplifier

Product specification

TDA1517ATW

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

VP

VPSC

Vrp

ERGo

IOSM

IORM

Ptot

Tvj

Tstg

Tamb

PARAMETER

supply voltage

AC and DC short-circuit-safe voltage

reverse polarity voltage

energy handling capability at outputs

non-repetitive peak output current

repetitive peak output current

total power dissipation

virtual junction temperature

storage temperature

ambient temperature

CONDITIONS

VP = 0 V

MIN.

−

−

−

−

−

−

−

−

−55

−40

MAX.

18

18

6

200

4

2.5

5

150

+150

+85

UNIT.

V

V

V

mJ

A

A

W

°C

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

tbf

PARAMETER

CONDITIONS

VALUE

−

UNIT

−

DC CHARACTERISTICS

VP = 12 V; Tamb = 25 °C; measured in Fig.3; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

Supply

VP

supply voltage

Iq

quiescent current

Operating condition

note 1

6.0

RL = ∞

−

VMODE(oper)

IMODE(oper)

VO

⎪ΔVOO⎪

mode switch voltage level

mode switch current

DC output voltage

DC output offset voltage

Mute condition

VMODE(mute)

VO

⎪ΔVOO⎪

mode switch voltage level

DC output voltage

DC output offset voltage

Standby condition

8.5

VMODE = 12 V

−

−

−

3.3

−

−

VMODE(stb) mode switch voltage level

0

Istb

standby current

−

Note

1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.

TYP.

12

40

−

15

5.7

−

−

5.7

−

−

0.1

MAX.

18

80

VP

40

−

150

6.4

−

150

2

100

UNIT

V

mA

V

μA

V

mV

V

V

mV

V

μA

2001 Apr 17

5

Share Link: