TDA1517ATW 查看數據表（PDF） - NXP Semiconductors.
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TDA1517ATW Datasheet PDF : 19 Pages
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NXP Semiconductors
8 W BTL or 2 × 4 W SE power amplifier
Product specification
TDA1517ATW
AC CHARACTERISTICS
VP = 12 V; f = 1 kHz; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
SE application; note 1
Po
output power
THD
fro(L)
fro(H)
GV
⎪ΔGV⎪
SVRR
total harmonic distortion
low frequency roll-off
high frequency roll off
voltage gain
channel balance
supply voltage ripple rejection
⎪Zi⎪
Vn(o)(rms)
input impedance
noise output voltage (RMS value)
αcs
channel separation
Vo(mote)
output voltage in mute
BTL application; note 8
note 2
THD = 1%
THD = 10%
Po = 1 W
−1 dB; note 3
−1 dB
note 4
on
mute
standby
note 5
on; RS = 0 Ω
on; RS = 10 kΩ
mute; note 6
RS = 10 kΩ
note 7
PO
output power
THD
fro(L)
fro(H)
GV
SVRR
total harmonic distortion
low frequency roll-off
high frequency roll off
voltage gain
supply voltage ripple rejection
⎪Zi⎪
Vn(o)(rms)
input impedance
noise output voltage (RMS value)
Vo(mute)
output voltage in mute
note 2
THD = 1%
THD = 10%
Po = 1 W
−1 dB; note 3
−1 dB
note 4
on
mute
standby
note 5
on; RS = 0 Ω
on; RS = 10 kΩ
mute; note 6
note 7
2001 Apr 17
6
MIN. TYP. MAX. UNIT
2.5
3.3
−
W
3
4
−
W
−
0.1
−
%
−
25
−
Hz
20
−
−
kHz
19
20
21
dB
−
−
1
dB
46
−
−
dB
46
−
−
dB
80
−
−
dB
50
60
75
kΩ
−
50
−
μV
−
70
100
μV
−
50
−
μV
40
55
−
dB
−
−
2
mV
5
6.6
−
W
6.5
8.0
−
W
−
0.03 −
%
−
25
−
Hz
20
−
−
kHz
25
26
27
dB
50
−
−
dB
50
−
−
dB
80
−
−
dB
25
30
38
kΩ
−
70
−
μV
−
100
200
μV
−
60
−
μV
−
−
2
mV
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