TIC246B 查看數據表（PDF） - Comset Semiconductors
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TIC246B Datasheet PDF : 3 Pages
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SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• High current triacs
• 16 A RMS
• 70 A Peak
• Glass Passivated Wafer
• 200 V to 800 V Off-State Voltage
• Max IGT of 50 mA (Quadrants 1-3)
• 125 A peak current
• Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
BCDEMSN
Repetitive peak off-state voltage
(see Note1)
200 300 400 500 600 700 800 V
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
16
A
Peak on-state surge current full-sine-wave
(see Note3)
125
A
Peak gate current
±1
A
Operating case temperature range
-40 to +110
°C
Storage temperature range
-40 to +125
°C
Lead temperature 1.6 mm from case for 10
seconds
230
°C
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate
linearly to 110°C case temperature at the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
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