TIP106 查看數據表（PDF） - Inchange Semiconductor

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TIP106

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

TIP106

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A ,IB= -80mA

VBE(on) Base-Emitter On Voltage

IC= -8A ; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -80V, IE=0

ICEO

Collector Cutoff Current

VCE= -40V, IB=0

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

hFE-1

DC Current Gain

IC= -3A; VCE= -4V

hFE-2

DC Current Gain

IC= -8A; VCE= -4V

COB

Output Capacitance

IE= 0; VCB= -10V, f= 0.1MHz

MIN

MAX UNIT

-80

V

-2.0

V

-2.5

V

-2.8

V

-50

μA

-50

μA

-2

mA

1000 20000

200

300

pF

isc Website：www.iscsemi.cn

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