HMC313(V02) 查看數據表（PDF） - Hittite Microwave
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HMC313 Datasheet PDF : 6 Pages
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MICROWAVE CORPORATION
v02.0703
HMC313
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
RF Input Power (RFin)(Vcc = +5.0 Vdc) +20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 3.99 mW/°C above 85 °C)
0.259 W
Thermal Resistance
(junction to lead)
251 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
8
Absolute Maximum Ratings
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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