HMC315(V01) 查看數據表（PDF） - Hittite Microwave

零件编号

产品描述 (功能)

生产厂家

HMC315
(Rev.:V01)

GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz

Hittite Microwave 

MICROWAVE CORPORATION

v01.0701

HMC315

GaAs InGaP HBT MMIC DARLINGTON

AMPLIFIER, DC - 7.0 GHz

8

Application Circuit

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

+7.5 Vdc

RF Input Power (RFin)(Vcc = +7.0 Vdc) +20 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 60 °C)

(derate 4.14 mW/°C above 60 °C)

0.373 W

Thermal Resistance

(junction to lead)

242 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +60 °C

Note:

1. Select Rbias to achieve desired Vcc voltage on Pin 1.

2. External Blocking Capacitors are required on Pins 1 & 3.

Outline Drawing

8 - 84

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

Share Link: