TISP4219H3BJR 查看數據表（PDF） - Bourns, Inc
零件编号
产品描述 (功能)
生产厂家
TISP4219H3BJR
Bourns, Inc
TISP4219H3BJR Datasheet PDF : 15 Pages
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TISP4xxxH3/M3BJ Series for LCAS Protection
Electrical Characteristics, TISP4xxxM3, TA = 25 °C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
IDRM state current
VD = VDRM
Test Conditions
V(BO) Breakover voltage
Impulse breakover
V(BO) voltage
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Coff Off-state capacitance
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V DRM
V D = ±50 V
f = 1 MHz, Vd = 1 V rms, VD = 0,
f = 1 MHz, Vd = 1 V rms, VD = -1 V
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
f = 1 MHz, Vd = 1 V rms, VD = -100 V
(see Note 11)
NOTE 11: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V.
Min Typ Max Unit
TA = 25 °C
TA = 85 °C
‘4125
‘4219
±5
µA
±10
±125
V
±219
‘4125
‘4219
±132
V
±226
±0.15
±0.15
±0.6
A
±3
V
±0.6
A
±5
kV/µs
TA = 85 °C
±10
µA
62
74
56
67
52
62
pF
26
31
21
25
Thermal Characteristics
Parameter
RθJA Junction to free air thermal resistance
Test Conditions
EIA/JESD51-3 PCB, IT = ITSM(1000) ,
TA = 25 °C, (see Note 12)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000) , TA = 25 °C
Min Typ Max Unit
115
°C/W
52
NOTE 12: EIA/JESD51-2 environment and the PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JUNE 2001 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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