4300H4(2005) 查看數據表（PDF） - Bourns, Inc
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4300H4 Datasheet PDF : 13 Pages
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TISP4xxxH4BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min. Typ.
Repetitive peak off-
IDRM state current
VD = VDRM
TA = 25 °C
TA = 85 °C
‘4165
‘4180
V(BO) Breakover voltage
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
‘4200
‘4265
‘4300
‘4350
‘4165
Impulse breakover
V(BO) voltage
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4180
‘4200
‘4265
‘4300
‘4350
I(BO)
VT
IH
dv/dt
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = -/+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85VDRM
±0.15
±0.225
±5
ID
Off-state current
VD = ±50 V
f = 100 kHz, Vd = 1 V rms, VD = 0,
TA = 85 °C
‘4165 thru ‘4200
80
‘4265 thru ‘4350
70
f = 100 kHz, Vd = 1 V rms, VD = -1 V
‘4165 thru ‘4200
71
‘4265 thru ‘4350
60
Coff Off-state capacitance f = 100 kHz, Vd = 1 V rms, VD = -2 V
‘4165 thru ‘4200
65
‘4265 thru ‘4350
55
f = 100 kHz, Vd = 1 V rms, VD = -50 V
‘4165 thru ‘4200
30
‘4265 thru ‘4350
24
f = 100 kHz, Vd = 1 V rms, VD = -100 V
(see Note 6)
‘4165 thru ‘4200
28
‘4265 thru ‘4350
22
Max.
±5
±10
±165
±180
±200
±265
±300
±350
±174
±189
±210
±276
±311
±363
±0.8
±3
±0.8
±10
90
84
79
67
74
62
35
28
33
26
Unit
µA
V
V
A
V
A
kV/µs
µA
pF
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V.
Thermal Characteristics
Parameter
RθJA Junction to free air thermal resistance
Test Conditions
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
Min. Typ. Max. Unit
113
°C /W
50
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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