TISP4072F3LM-S 查看數據表（PDF） - Bourns, Inc
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TISP4072F3LM-S Datasheet PDF : 8 Pages
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TISP4xxxF3LM Overvoltage Protector Series
Electrical Characteristics for R and T Terminals, TJ = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min Typ Max Unit
Repetitive peak off-
IDRM state current
VD = ±VDRM, 0 °C < TJ < 70 °C
±10
µA
‘4072
±72
‘4082
‘4125
‘4150
±82
±125
±150
V(BO) Breakover voltage
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
±180
V
±240
±260
±290
±320
±380
‘4072
±86
‘4082
±96
‘4125
‘4150
±143
±168
Impulse breakover
V(BO) voltage
dv/dt = ±1000 V/µs, RSOURCE = 50 Ω
di/dt < 20 A/µs
‘4180
‘4240
‘4260
‘4290
‘4320
±198
V
±267
±287
±317
±347
‘4380
±407
I(BO)
VT
IH
dv/dt
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = - /+ 30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85VDRM
±0.15
±0.15
±5
±0.6
±3
A
V
A
kV/µs
ID
Off-state current
VD = ±50 V
f = 100 kHz, Vd = 1 V r.m.s., VD = 0,
‘4072 - ‘4082
‘4125 - ‘4180
±10
µA
63 108
43
74
Coff
Off-state capacitance
f = 100 kHz, Vd = 1 V r.m.s., VD = -50 V
‘4240 - ‘4380
‘4072 - ‘4082
‘4125 - ‘4180
44
74
pF
25
40
15
25
‘4240 - ‘4380
11
20
Thermal Characteristics
Parameter
RΘJA Junction to free air thermal resistance
Test Conditions
EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure
Min Typ Max Unit
120 °C/W
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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