TCM1030DR 查看數據表（PDF） - Power Innovations Ltd

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TCM1030DR

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

Power Innovations Ltd 

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

general

DEVICE PARAMETERS

Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late

1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As

these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics.

This resulted in the invention of new terms based on the application usage and device characteristic. Initially,

there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced

and stabilised.

Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to

specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted

in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and

their alternatives, this section has a list of alternative terms and the parameter definitions used for this data

sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure,

rather than its application usage as a single device may have many applications each using a different

terminology for circuit connection.

alternative symbol cross-reference guide

This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in

some cases the alternative symbols have no substance in international standards and are not fully defined by

the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this

guide.

CROSS-REFERENCE FOR TISP61060 AND TCM1030/60

TISP61060 PARAMETER

DATA SHEET ALTERNATIVE

ALTERNATIVE PARAMETER

SYMBOL

SYMBOL

RATINGS & CHARACTERISTICS

TCM1060, TCM1030

Non-repetitive peak on-state pulse current

ITSP

-

Non-repetitive peak on-state current

ITSM

-

Non-repetitive peak on-state current

ITSM

-

Forward voltage

VF

VCF

Forward current

IF

IFM

On-state voltage

VT

VC

On-state current

IT

ITM

Switching current

IS

Itrip

Breakover voltage

V(BO)

Vtrip

Gate reverse current (with A and K terminals connected) IGAS

ID

Off-state current

ID

ID

Off-state voltage

VD

VS

Gate-cathode breakover voltage

VGK(BO)

VOS

Gate voltage, (VGG is gate supply voltage referenced

to the A terminal)

VG

VS

Non-repetitive peak surge current

Non-repetitive peak surge current,10 ms

Continuous 60-Hz sinewave, 2 s

Forward clamping voltage

Peak forward current

Reverse clamping voltage

Peak reverse current

Trip current

Trip voltage

Stand-by current, TIP & RING at GND

Stand-by current, TIP & RING at VS

Supply voltage

Transient overshoot voltage

Supply voltage

Off-state capacitance

TERMINALS

CO

Coff

Off-state capacitance

TCM1060, TCM1030

Cathode 1

K1

Tip

Tip

Cathode 2

K2

Ring

Ring

Anode

A

GND

Ground

Gate

G

VS

Supply voltage

PRODUCT INFORMATION

4

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