TCM1060D 查看數據表（PDF） - Power Innovations Ltd
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TCM1060D
Power Innovations Ltd
TCM1060D Datasheet PDF : 14 Pages
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TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
10
0
-10
-20
-30
-40
VG
-50
-60
0
5
300
200
100
IK
0
IG
-100
-200
-300
0
5
VK
10
Time - ms
10
Time - ms
15
IG
IK
15
20
10
8
6
4
2
0
-2
-4
-6
-8
-10
20
AI6XAI
Figure 6. TISP61060 HIGH IMPEDANCE POWER CROSS CLIPPING WAVE FORMS
energy capability. Second, the series gate diodes have been changed to transistor buffers. The maximum
current injected into the gate supply is then reduced by the transistors gain factor (HFE). Third, some current
from the positive voltage diode conduction has been diverted to the gate terminal which subtracts from the
normal gate current. In most cases, this allows any previously used SLIC supply rail shunt protection diode to
be removed. Although the SLIC supply is taken to a terminal that is internally connected to transistor bases,
the terminal is still designated as the gate terminal, G.
Figure 6 shows the high impedance a.c. waveforms for the TISP61060. As the TISP61060 replaces the IC
based protector’s gate diode with a transistor, the peak gate current is reduced by over 50 times. In addition
there is a compensating negative gate current flow during diode conduction. The TISP61060 has the
maximum value of peak gate current specified and so allows for designer to design for limit conditions. Most
IC protectors do not specify this parameter. Figure 7 shows the improvement due to the TISP61060. These
plots show the full cycle average gate current against rms a.c. voltage. The IC based protector has a
substantial positive gate current which will always charge the SLIC supply, possibly causing an overvoltage.
The TISP61060 has a negative gate current and so cannot overvoltage the SLIC.
PRODUCT INFORMATION
9
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