K50A04K3 查看數據表（PDF） - NXP Semiconductors.
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K50A04K3 Datasheet PDF : 9 Pages
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6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
Min
IGSS
VGS = ±20 V, VDS = 0 V
IDSS
VDS = 40 V, VGS = 0 V
V(BR)DSS ID = 10 mA, VGS = 0 V
40
V(BR)DSX ID = 10 mA, VGS = -20 V
20
Vth
VDS = 10 V, ID = 1 mA
3.0
RDS(ON) VGS = 10 V, ID = 25 A
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Min
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Crss
Coss
tr
See Figure 6.2.1.
ton
tf
toff
TK50A04K3
Typ. Max Unit
±1
µA
10
V
4.0
2.7
3.5
mΩ
Typ. Max Unit
4500
pF
900
1100
21
ns
37
31
75
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Qg
VDD ≈ 32 V, VGS = 10 V, ID = 50 A
Qgs
Qgd
Min Typ. Max Unit
102
nC
56
46
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
(Note 4)
(Note 4)
IDR
IDRP
VDSF
IDR = 50 A, VGS = 0 V
Reverse recovery time
Reverse recovery charge
trr
IDR = 50 A, VGS = 0 V
Qrr
-dIDR/dt = 50 A/µs
Note 4: Ensure that the channel temperature does not exceed 175.
Min Typ. Max Unit
50
A
200
-1.2
V
61
ns
49
nC
3
2013-02-19
Rev.1.0
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