UESD5.0DT5G(2005) 查看數據表（PDF） - ON Semiconductor

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UESD5.0DT5G
(Rev.:2005)

ESD Protection Diodes In Ultra Small SOT−723 Package

ON Semiconductor 

mESD3.3DT5G SERIES

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

VC

VRWM

IR

VBR

IT

IF

VF

Ppk

C

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

Breakdown Voltage @ IT

Test Current

Forward Current

Forward Voltage @ IF

Peak Power Dissipation

Max. Capacitance @VR = 0 and f = 1 MHz

I

IF

VC VBR VRWM

IIRT VF

V

IPP

Uni−Directional TVS

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)

Device*

Device

Marking

VRWM (V)

Max

VBR (V) @ IT

IR (mA) @ VRWM

(Note 2)

IT

Max

Min

mA

mESD3.3DT5G

L0

3.3

1.0

5.0

1.0

mESD5.0DT5G

mESD6.0DT5G

L2

5.0

0.1

6.2

1.0

L3

6.0

0.1

7.0

1.0

*Other voltages available upon request.

2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

C (pF)

Typ

47

38

34

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