UFB200FA20 查看數據表（PDF） - Vishay Semiconductors
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UFB200FA20 Datasheet PDF : 8 Pages
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UFB200FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 240 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage VBR
Forward voltage
VFM
Reverse leakage current
IRM
Junction capacitance
CT
IR = 100 μA
IF = 120 A
IF = 120 A, TJ = 150 °C
VR = VR rated
TJ = 150 °C, VR = VR rated
VR = 200 V
200
-
-
-
-
-
-
-
-
-
-
200
MAX.
-
1.1
0.95
50
2
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Reverse recovery time
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
trr
TJ = 25 °C
-
-
45
-
34
-
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
58
-
IF = 150 A
-
5.1
-
dIF/dt = 200 A/μs
VR = 160 V
-
10.3
-
-
87
-
-
300
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
Junction to case, both leg conducting
RthJC
Case to heatsink
Weight
RthCS
Mounting torque
TEST CONDITIONS
Flat, greased surface
MIN.
-
-
-
-
-
TYP.
-
-
0.05
30
1.3
MAX.
0.5
0.25
-
-
-
UNITS
°C/W
g
Nm
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 94087
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 21-Jul-10
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