UGB18DCTHE3 查看數據表（PDF） - Vishay Semiconductors
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UGB18DCTHE3 Datasheet PDF : 5 Pages
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www.vishay.com
UG18xCT, UGF18xCT, UGB18xCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT UNIT
Max. instantaneous forward
voltage per diode (1)
9.0 A
20 A
5.0 A
TJ = 100 °C
VF
1.1
1.2
V
0.95
Max. DC reverse current at
rated DC blocking voltage
per diode
TA = 25 °C
IR
TA = 100 °C
Max. reverse recovery time
per diode
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
Max. reverse recovery time
per diode
IF = 9.0 A, VR = 30 V, TJ = 25 °C
dI/dt = 50 A/μs,
Irr = 10 % IRM
TJ = 100 °C
trr
IF = 9.0 A, VR = 30 V, TJ = 25 °C
Max. stored charge per diode dI/dt = 50 A/μs,
Qrr
Irr = 10 % IRM
TJ = 100 °C
Typical junction capacitance
per diode
at 4.0 V, 1 MHz
CJ
10
μA
300
20
ns
30
ns
50
20
nC
45
30
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG18
Typical thermal resistance from junction to case per diode
RJC
4.0
UGF18
6.0
UGB18
4.0
UNIT
°C/W
ORDERING INFORMATION (EXAMPLE)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
UG18DCT-E3/45
1.85
PACKAGE CODE
45
ITO-220AB
UGF18DCT-E3/45
2.00
45
TO-263AB
UGB18DCT-E3/45
1.35
45
TO-263AB
UGB18DCT-E3/81
1.35
81
ITO-220AB
UGF18DCTHE3/45 (1)
2.00
45
TO-263AB
UGB18DCTHE3/45 (1)
1.35
45
TO-263AB
UGB18DCTHE3/81 (1)
1.35
81
Note
(1) AEC-Q101 qualified, available in ITO-220AB and TO-263AB package
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tape and reel
Revision: 03-Jul-2018
2
Document Number: 88759
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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