VG26S17405J-5 查看數據表（PDF） - Vanguard International Semiconductor

零件编号

产品描述 (功能)

生产厂家

VG26S17405J-5

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor 

VIS

VG26(V)(S)17405FJ

4,194,304 x 4 - Bit

CMOS Dynamic RAM

DC Characteristics; 5- Volt Verion

(Ta = 0 to + 70 °C, VCC= + 5V ±10 ,VSS = 0V)

Parameter

Symbol

Test Conditions

Operating current

Low

power

S-version

Standby

Current

Standard

power

version

RAS-only

refresh current

EDO page mode

current

CAS-before-RAS

refresh current

Self-refresh current

(S - Version)

CAS- before- RAS long

refresh current

(S-Version)

ICC1 RAS cycling

CAS, cycling

tRC = min

TTL interface

RAS, CAS = VIH

Dout = High-Z

CMOS interface

RAS, CAS ≥ Vcc -0.2V

ICC2 Dout = High-Z

TTL interface

RAS, CAS = VIH

Dout = High-Z

CMOS interface

RAS, CAS ≥ Vcc -0.2V

Dout = High-Z

ICC3

RAS cycling, CAS = VIH

tRC = min

ICC4

tRC = min

ICC5

ICC8

tRC = min

RAS, CAS cycling

tRAS ≥ 100µs

ICC9

Standby: VCC- 0.2V ≤ RAS

CAS before RAS refresh:

2048 cycles / 128ms

RAS, CAS: 0V ≤ VIL ≤ 0.2V

VCC- 0.2V ≤ VIH ≤ VIH (Max)

Dout = High-Z, tRAS ≤ 300ns

VG26(V)(S)17405

Unit Notes

-5

-6

Min Max Min Max

- 120

- 110 mA 1, 2

-

2

-

2 mA

- 0.25

- 0.25 mA

2

-

2 mA

1

-

1 mA

- 120

- 110 mA 1, 2

- 90

- 120

- 80 mA 1, 3

- 110 mA 1, 2

- 350

- 500

- 350 µA

- 500 µA

Document:1G5-0162

Rev.1

Page 6

Share Link: