VG26S17405FJ 查看數據表（PDF） - Vanguard International Semiconductor

零件编号

产品描述 (功能)

生产厂家

VG26S17405FJ

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor 

VIS

VG26(V)(S)17405FJ

4,194,304 x 4 - Bit

CMOS Dynamic RAM

DC Characteristics ; 5-Volt Version (Cont.)

(Ta = 0 to + 70°C, VCC = + 5V ±10 %,VSS = 0V)

Parameter

Input leakage current

Output leakage current

Output high Voltage

Output low voltage

Symbol

ILI

ILO

VOH

VOL

Test Conditions

0V ≤ VIN ≤ VCC + 0.5V

0V ≤ VOUT ≤ VCC + 0.5V

Dout = Disable

IOH = - 5mA

IOL = + 4.2mA

VG26(V)(S) 17405

-5

-6

Min Max Min Max Unit Notes

-5

5

-5

5 µA

-5

5

-5

5 µA

2.4

- 2.4

-V

-

0.4

-

0.4 V

Notes:

1. ICC is specified as an average current. It depends on output loading condition and cycle rate when the

device is selected. ICC max is specified at the output open condition.

2. Address can be changed once or less while RAS = VIL.

3. For ICC4, address can be changed once or less within one EDO page mode cycle time.

Document:1G5-0162

Rev.1

Page 7

Share Link: