Thermal Characteristics
Package
ID (continuous)1,2
ID (pulsed)
TO-92
0.31A
1.0A
Notes:
1. ID (continuous) is limited by max rated Tj.
2. VN0106N3 can be used if an ID (continuous) of 0.5 is needed.
Power Dissipation
@ TC = 25°C
1.0W
θjc
°C/W
125
θja
°C/W
170
VN10K
IDR
0.31A
IDRM
1.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max
BVDSS
Drain-to-Source
60
Breakdown Voltage
VGS(th)
∆VGS(th)
IGSS
IDSS
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
0.8
2.5
-3.8
100
10
500
ID(ON)
RDS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
0.75
7.5
5.0
∆RDS(th)
Change in RDS(th) with Temperature
0.7
GFS
Forward Transconductance
100
CISS
Input Capacitance
48
60
COSS
Common Source Output Capacitance
16
25
CRSS
Reverse Transfer Capacitance
2
5
t(ON)
Turn-ON Time
10
t(OFF)
Turn-OFF Time
10
VSD
Diode Forward Voltage Drop
0.8
trr
Reverse Recovery Time
160
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Unit
V
V
mV/°C
nA
µA
µA
A
Ω
Ω
%/°C
m
pF
ns
V
ns
Conditions
VGS = 0V, ID = 100µA
VGS = VDS , ID = 1mA
VGS = VDS, ID = 1mA
VGS = 15V, VDS = 0V
VGS = 0V, VDS = 45V
VGS = 0V, VDS = 45V, TA 125°C
VGS = 10V, VDS = 10V
VGS = 5V, ID = 0.2A
VGS = 10V, ID = 500mA
VGS = 10V, ID = 500mA,
VDS = 10V, ID = 500mA
VDS = 25V, VGS = 0V
f = 1 MHz
VDD = 15V, ID = 0.6A,
RGEN = 25Ω
VGS = 0V, ISD = 0.5A
VGS = 0V, ISD = 0.5A
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
2