VN2222LL 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
VN2222LL Datasheet PDF : 4 Pages
| |||
VN2222LL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 100 mAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate−Body Leakage Current, Forward
(VGSF = 30 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C)
Drain−Source On−Voltage
(VGS = 5.0 Vdc, ID = 200 mAdc)
(VGS = 10 Vdc, ID = 500 mAdc)
On−State Drain Current
(VGS = 10 Vdc, VDS ≥ 2.0 VDS(on))
Forward Transconductance
(VDS = 10 Vdc, ID = 500 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 600 mA,
Rgen = 25 W, RL = 23 W)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min
Max
Unit
V(BR)DSS
IDSS
IGSSF
60
−
Vdc
mAdc
−
10
−
500
−
−100 nAdc
VGS(th)
rDS(on)
VDS(on)
ID(on)
gfs
0.6
2.5
Vdc
W
−
7.5
−
13.5
−
Vdc
−
1.5
3.75
750
−
mA
100
−
mmhos
Ciss
Coss
Crss
ton
toff
−
60
pF
−
25
−
5.0
−
10
ns
−
10
ORDERING INFORMATION
Device
VN2222LL
VN2222LLG
Package
TO−92
TO−92
(Pb−Free)
Shipping†
1000 Unit / Box
1000 Unit / Box
VN2222LLRL
VN2222LLRLRA
VN2222LLRLRAG
TO−92
TO−92
TO−92
(Pb−Free)
1000 Unit / Box
2000 Tape & Reel
2000 Tape & Reel
VN2222LLRLRM
TO−92
2000 Unit / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
Share Link: 