DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

W9712G8JB 查看數據表(PDF) - Winbond

零件编号
产品描述 (功能)
生产厂家
W9712G8JB Datasheet PDF : 86 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
W9712G8JB
3. KEY PARAMETERS
SYM.
SPEED GRADE
Bin(CL-tRCD-tRP)
Part Number Extension
@CL = 7
@CL = 6
tCK(avg) Average clock period
@CL = 5
@CL = 4
@CL = 3
tRCD
tRP
tRC
tRAS
IDD0
IDD1
IDD4R
IDD4W
IDD5B
IDD6
IDD7
Active to Read/Write Command Delay Time
Precharge to Active Command Period
Active to Ref/Active Command Period
Active to Precharge Command Period
Operating current
Operation current (Single bank)
Operating burst read current
Operating burst write current
Burst refresh current
Self refresh current
Operating bank interleave read current
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Min.
Min.
Min.
Max.
Max.
Max.
Max.
Max.
Max.
Max.
DDR2-1066
7-7-7
-18
1.875 nS
7.5 nS
2.5 nS
7.5 nS
3 nS
7.5 nS
3.75 nS
7.5 nS
13.125 nS
13.125 nS
53.125 nS
40 nS
70 mA
75 mA
120 mA
135 mA
90 mA
6 mA
170 mA
DDR2-800
5-5-5/6-6-6
-25
2.5 nS
8 nS
2.5 nS
8 nS
3.75 nS
8 nS
5 nS
8 nS
12.5 nS
12.5 nS
52.5 nS
40 nS
65 mA
70 mA
95 mA
120 mA
80 mA
6 mA
140 mA
DDR2-667
5-5-5
-3
3 nS
8 nS
3.75 nS
8 nS
5 nS
8 nS
15 nS
15 nS
55 nS
40 nS
60 mA
65 mA
90 mA
115 mA
80 mA
6 mA
130 mA
Publication Release Date: Oct. 12, 2010
-5-
Revision A01

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]