MTB1306 查看數據表（PDF） - Motorola => Freescale
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MTB1306 Datasheet PDF : 8 Pages
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MTB1306
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
Vdc
30
—
—
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
µAdc
—
—
10
—
—
100
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 38 Adc)
(VGS = 5.0 Vdc, ID = 38 Adc)
VGS(th)
Vdc
1.0
1.5
2.0
RDS(on)
mW
—
5.8
6.5
—
7.4
8.5
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C)
VDS(on)
Vdc
—
0.44
0.5
—
—
0.38
Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)
gFS
15
55
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
—
2560
3584
pF
—
1305
1827
—
386
772
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc,
RG = 4.7 Ω)
td(on)
tr
td(off)
tf
—
17
35
ns
—
170
340
—
68
136
—
145
290
Gate Charge
QT
—
50
70
nC
(VDS = 24 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc)
Q1
—
8.3
—
Q2
—
25.3
—
Q3
—
17.2
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
—
0.75
1.1
—
0.64
—
Reverse Recovery Time
trr
—
84
—
ns
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
—
35
—
tb
—
53
—
Reverse Recovery Stored Charge
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
QRR
—
0.13
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data
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