MTB1306 查看數據表（PDF） - Motorola => Freescale
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MTB1306 Datasheet PDF : 8 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTB1306
150
VGS = 10 V
125
TJ = 25°C
100
5.0 V
4.0 V
75
50
25
0
0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
180
160 VDS ≥ 10 V
140
120
100
80
60
25°C
40
20 125°C
0
TJ = –55°C
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
TJ = 100°C
25°C
–55°C
VGS ≥ 10 V
0.002
0.001
0
20
40
60
80
100
120
140
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.009
0.008
TJ = 25°C
0.007
VGS = 5.0 V
0.006
10 V
0.005
0.004
20 30 40 50 60 70 80 90 100 110 120 130 140 150
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 38 A
1.5
1.0
0.5
10,000
1000
100
TJ = 125°C
100°C
0
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10
5.0
10
15
20
25
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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