MTD20P06 查看數據表（PDF） - Motorola => Freescale

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MTD20P06

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on)= 0.045 OHM

Motorola => Freescale 

MTD20N06HDL

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

—

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

—

—

IGSS

—

VGS(th)

1.0

—

Static Drain–Source On–Resistance

(VGS = 4.0 Vdc, ID = 10 Adc)

(VGS = 5.0 Vdc, ID = 10 Adc)

RDS(on)

—

—

Drain–Source On–Voltage (VGS = 5.0 Vdc)

(ID = 20 Adc)

(ID = 10 Adc, TJ = 125°C)

VDS(on)

—

—

Forward Transconductance (VDS = 4.0 Vdc, ID = 10 Adc)

gFS

6.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDS = 30 Vdc, ID = 20 Adc,

VGS = 5.0 Vdc,

RG = 9.1 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge

QT

—

(VDS = 48 Vdc, ID = 20 Adc,

VGS = 5.0 Vdc)

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 20 Adc, VGS = 0 Vdc)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

Reverse Recovery Time

(IS = 20 Adc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

—

ta

—

tb

—

QRR

—

LD

—

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

LS

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

—

—

25

—

mV/°C

µAdc

—

10

—

100

—

100

nAdc

1.5

6.0

0.045

0.037

0.76

—

12

2.0

—

0.070

0.045

1.2

1.1

—

Vdc

mV/°C

Ohm

Vdc

mhos

863

1232

pF

216

300

53

73

11

15

ns

151

190

34

35

75

98

14.6

22

nC

3.25

—

7.75

—

7.0

—

Vdc

0.95

1.1

0.88

—

22

—

ns

12

—

34

—

0.049

—

µC

nH

4.5

—

nH

7.5

—

2

Motorola TMOS Power MOSFET Transistor Device Data

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