ZDT694(1995) 查看數據表（PDF） - Diodes Incorporated.

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ZDT694
(Rev.:1995)

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

Diodes Incorporated. 

SM-8 DUAL NPN MEDIUM POWER

HIGH GAIN TRANSISTORS

ISSUE 1 - NOVEMBER 1995

ZDT694

C1

B1

C1

E1

C2

B2

C2

E2

PARTMARKING DETAIL – T694

SM-8

(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Operating and Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

ICM

IC

Tj:Tstg

VALUE

120

120

5

1

0.5

-55 to +150

UNIT

V

V

V

A

A

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

VALUE

UNIT

Total Power Dissipation at Tamb = 25°C*

Ptot

Any single die “on”

Both die “on” equally

2.25

W

2.75

W

Derate above 25°C*

Any single die “on”

Both die “on” equally

18

mW/ °C

22

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single die “on”

Both die “on” equally

55.6

°C/ W

45.5

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

3 - 342

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